Light emitting device package structure and manufacturing method thereof

ABSTRACT

A light emitting device package structure includes a substrate, a circuit layer structure, a light emitting device, a first redistribution layer, a conductive connector, a second redistribution layer, and a chip. The circuit layer structure is disposed over the substrate, and the circuit layer structure includes a first circuit layer. The light emitting device is disposed over the circuit layer structure and is electrically connected with the first circuit layer. The first redistribution layer is disposed over the light emitting device and includes a second circuit layer and a conductive contact contacting the second circuit layer. The conductive connector connects the first circuit layer and the second circuit layer. The second redistribution layer is disposed over the first redistribution layer and includes a third circuit layer contacting the conductive contact. The chip is disposed over the second redistribution layer and is electrically connected with the third circuit layer.

RELATED APPLICATIONS

This application claims priority to Taiwan Application Serial Number107122835, filed Jul. 2, 2018, which is herein incorporated byreference.

BACKGROUND Field of Invention

The present invention relates to a light emitting device packagestructure, and a manufacturing method of the light emitting devicepackage structure.

Description of Related Art

In general, driving chips are disposed in the peripheral area of thedisplay device such as a mobile phone, a tablet computer or the like.However, this design reduces the display area of the display device. Inrecent years, a chip-on-film (COF) technology has been employed tonarrow the peripheral area of a display device. That is, a portion of aflexible circuit board (FPC) is attached to the front side of thesubstrate of the display device, and another portion of the flexiblecircuit board is bent to the back side. Since the driving chip isdisposed on the flexible circuit board that locates on the back side,the required space of the peripheral area can be reduced.

However, bending the flexible circuit board causes stress in the portionof the flexible circuit board that contacts the substrate. Therefore,the portion is easily peeled off or broken, and the wiring on theflexible circuit board is also prone to breakage. In addition, it isstill necessary to reserve a space of the substrate for connecting withthe flexible circuit board. Therefore, the peripheral area of thedisplay device cannot be effectively narrowed.

SUMMARY

An aspect of the present invention provides a light emitting devicepackage structure comprising a protective substrate, a circuit layerstructure, a light emitting device, a first redistribution layer, aconductive connector, a second redistribution layer, and a chip. Thecircuit layer structure is disposed over the substrate, and the circuitlayer structure includes a first circuit layer. The light emittingdevice is disposed over the circuit layer structure or between theprotective substrate and the circuit layer structure, wherein the lightemitting device is electrically connected with the first circuit layer.The first redistribution layer is disposed over the light emittingdevice, and the first redistribution layer includes a second circuitlayer and a conductive contact that contacts the second circuit layer.The conductive connector connects the first circuit layer and the secondcircuit layer. The second redistribution layer is disposed over thefirst redistribution layer, and the second redistribution layer includesa third circuit layer that contacts the conductive contact. The chip isdisposed over the second redistribution layer and is electricallyconnected with the third circuit layer.

In some embodiments of the present invention, the first redistributionlayer further includes a first insulating layer covering the secondcircuit layer. The first insulating layer has a through-hole exposing aportion of the second circuit layer. The conductive contact is filled inthe through-hole to contact the second circuit layer.

In some embodiments of the present invention, the second redistributionlayer further includes a second insulating layer covering the thirdcircuit layer. The second insulating layer has an opening exposing aportion of the third circuit layer. The chip is electrically connectedwith the third circuit layer through the opening.

In some embodiments of the present invention, a line width and a linepitch of the second circuit layer are less than 8 micrometers, and aline width and a line pitch of the third circuit layer are less than 8micrometers.

Another aspect of the present invention provides a light emitting devicepackage structure comprising a protective substrate, a light emittingdevice, a first redistribution layer, a second redistribution layer, anda chip. The light emitting device is disposed over the protectivesubstrate. The first redistribution layer is disposed over the lightemitting device, and the first redistribution layer includes a firstcircuit layer that is electrically connected with the light emittingdevice. The second redistribution layer is disposed over the firstredistribution layer, and the second redistribution layer includes asecond circuit layer and a conductive contact that contacts the firstcircuit layer and the second circuit layer. The chip is disposed overthe second redistribution layer and electrically connected with thesecond circuit layer.

In some embodiments of the present invention, the second redistributionlayer further includes an insulating layer covering the first circuitlayer. The insulating layer has a through-hole exposing a portion of thefirst circuit layer. The conductive contact is filled in thethrough-hole to contact the first circuit layer and the second circuitlayer.

In some embodiments of the present invention, a line width and a linepitch of the first circuit layer are less than 8 micrometers, and a linewidth and a line pitch of the second circuit layer are less than 8micrometers.

Another aspect of the present invention provides a manufacturing methodof a light emitting device package structure comprising followingoperations: (i) providing a circuit redistribution structure; (ii)providing a first substrate; (iii) forming a circuit layer structureover the first substrate, wherein the circuit layer structure includes afirst circuit layer; (iv) before or after operation (iii), placing alight emitting device between the first substrate and the circuit layerstructure or over the circuit layer structure, wherein the lightemitting device is electrically connected with the first circuit layer;and (v) placing the circuit redistribution structure over the lightemitting device, wherein the circuit redistribution structure includes afirst redistribution layer, a second redistribution layer, and a chip;wherein the first redistribution layer includes a second circuit layerand a conductive contact that contacts the second circuit layer; whereinthe second circuit layer is electrically connected with the firstcircuit layer through a conductive connector; wherein the secondredistribution layer includes a third circuit layer that contacts theconductive contact, and the third circuit layer is electricallyconnected with the chip.

In some embodiments of the present invention, operation (i) includes thefollowing sub-operations: (a) forming the first redistribution layerover a second substrate; (b) forming the second redistribution layerover the first redistribution layer; (c) placing the chip over thesecond redistribution layer; and (d) peeling off the second substrate toexpose the second circuit layer to form the circuit redistributionstructure.

Another aspect of the present invention provides a manufacturing methodof a light emitting device package structure comprising followingoperations: (i) providing a circuit redistribution structure having asubstrate, a first redistribution layer, and a second redistributionlayer; wherein the first redistribution layer is disposed over thesubstrate, and the first redistribution layer includes a first circuitlayer and a conductive contact that contacts the first circuit layer;wherein the second redistribution layer is disposed over the firstredistribution layer, and the second redistribution layer includes asecond circuit layer that contacts the conductive contact; (ii) placinga light emitting device over the second redistribution layer, whereinthe light emitting device is electrically connected with the secondcircuit layer; (iii) peeling off the substrate to expose the firstcircuit layer before or after operation (ii); and (iv) placing a chipbelow the first redistribution layer, wherein the chip is electricallyconnected with the first circuit layer.

It is to be understood that both the foregoing general description andthe following detailed description are by examples, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention can be more fully understood by reading the followingdetailed description of the embodiment, with reference made to theaccompanying drawings as follows:

FIG. 1 is a cross-sectional view illustrating a light emitting devicepackage structure according to the first embodiment of the presentinvention;

FIG. 2 is a cross-sectional view illustrating a light emitting devicepackage structure according to the second embodiment of the presentinvention;

FIG. 3 is a cross-sectional view illustrating a light emitting devicepackage structure according to the third embodiment of the presentinvention;

FIGS. 4-7 are cross-sectional views illustrating various stages of amethod for forming a circuit redistribution structure according to anembodiment of the present invention;

FIG. 8 is a cross-sectional view illustrating a stage of a manufacturingmethod of a light emitting device package structure according to thefirst embodiment of the present invention;

FIGS. 9-11 are cross-sectional views illustrating various stages of amanufacturing method of a light emitting device package structureaccording to the second embodiment of the present invention;

FIGS. 12-14 are cross-sectional views illustrating various stages of amanufacturing method of a light emitting device package structureaccording to the third embodiment of the present invention; and

FIGS. 15-18 are cross-sectional views illustrating various stages ofanother manufacturing method of a light emitting device packagestructure according to the third embodiment of the present invention.

DETAILED DESCRIPTION

Reference will now be made in detail to the present embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

Before describing the preferred embodiment in more detail, furtherexplanation shall be given regarding certain terms that may be usedthroughout the descriptions.

FIG. 1 is a cross-sectional view illustrating a light emitting devicepackage structure 10 according to the first embodiment of the presentinvention. As shown in FIG. 1, the light emitting device packagestructure 10 includes a protective substrate 100, a circuit layerstructure 200, a light emitting device 300, a conductive connector 400,and a circuit redistribution structure 500.

The protective substrate 100 can be a transparent substrate commonlyused in general display devices. In some embodiments, the protectivesubstrate 100 is a flexible substrate, such as a polyimide (PI)substrate. In other embodiments, the protective substrate 100 is a rigidsubstrate, such as a glass substrate or a plastic substrate.

The circuit layer structure 200 is disposed over the protectivesubstrate 100. Specifically, the circuit layer structure 200 includes afirst circuit layer 210 and a dielectric layer 220, and the firstcircuit layer 210 is disposed on an upper surface of the dielectriclayer 220. In some embodiments, the first circuit layer 210 includes anyconductive material, for example, metals such as copper, nickel orsilver. It should be noted that the dielectric layer 220 is transparent,so that the light emitted from the light emitting device 300 can passthrough the dielectric layer 220 and the protective substrate 100 to theoutside of the structure. In some embodiments, the dielectric layer 220includes a transparent photoimageable dielectric (PID). As shown in FIG.1, the dielectric layer 220 has an opening 220 a, and the first circuitlayer 210 includes a bottom portion 211 and a sidewall portion 212respectively disposed on the bottom surface and the sidewall of theopening 220 a. In detail, the width of the opening 220 a is graduallynarrowed from the top toward the bottom, so that the opening 220 apresents a trapezoidal shape. The bottom portion 211 and the sidewallportion 212 of the first circuit layer 210 are conformal to the opening220 a, so that the bottom portion 211 and the sidewall portion 212 ofthe first circuit layer 210 define a recess 210 a that has substantiallythe same shape as the opening 220 a. The sidewall portion 212 of thefirst circuit layer 210 is adjacent to the end of the bottom portion 211and extends upward beyond the upper surface of the bottom portion 211.In more detail, the angle between the inner surface of the sidewallportion 212 and the upper surface of the bottom portion 211 is an obtuseangle. In other words, the width of the recess 210 a is graduallynarrowed from the top toward the bottom, so that the recess 210 apresents a trapezoidal shape. It should be noted that a certaintechnical effect can be achieved when the width of the recess 210 a isgradually narrowed from the top toward the bottom, which will bedescribed in detail below.

The light emitting device 300 is disposed over the circuit layerstructure 200 and electrically connected with the first circuit layer210. In some embodiments, the light emitting device 300 includes anorganic light emitting diode device. Although in FIG. 1 shows that thelight emitting device 300 is not in contact with the first circuit layer210, it should be understood that the light emitting device 300 can beelectrically connected with the first circuit layer 210 in any mannerwhen viewed in a different angle. For example, in some embodiments, thelight emitting device 300 is attached and electrically connected to thefirst circuit layer 210 by a conductive adhesive. Alternatively, inother embodiments, the light emitting device 300 may be attached andelectrically connected to the first circuit layer 210 in other manners.

The circuit redistribution structure 500 is disposed over the lightemitting device 300, and the circuit redistribution structure 500includes a first redistribution layer 510, a second redistribution layer520, and a chip 530.

The first redistribution layer 510 is disposed over the light emittingdevice 300. Specifically, the first redistribution layer 510 includes asecond circuit layer 511, a first insulating layer 512, and a conductivecontact 513. In some embodiments, the second circuit layer 511 includesany conductive material, for example, metals such as copper, nickel orsilver. In some embodiments, the second circuit layer 511 has a linewidth and a line pitch of less than 8 micrometers, such as 7micrometers, 6 micrometers, 5 micrometers, 4 micrometers, 3 micrometers,2 micrometers, 1 micrometers, or 0.5 micrometers. The first insulatinglayer 512 covers the second circuit layer 511, and the first insulatinglayer 512 has a through-hole 512 a. In some embodiments, the firstinsulating layer 512 includes a photoimageable dielectric. Thethrough-hole 512 a exposes a portion of the second circuit layer 511,and the conductive contact 513 is filled in the through-hole 512 a, sothat the conductive contact 513 contacts the second circuit layer 511.The conductive contact 513 may be a metal pillar, and includes, forexample, a conductive metal such as copper, nickel or silver. As shownin FIG. 1, the width of the conductive contact 513 is gradually narrowedfrom the top toward the bottom, so that the conductive contact 513presents a trapezoidal shape, but the shape is not limited thereto.

The second redistribution layer 520 is disposed over the firstredistribution layer 510. Specifically, the second redistribution layer520 includes a third circuit layer 521 and a second insulating layer522. The third circuit layer 521 contacts the conductive contact 513. Insome embodiments, the third circuit layer 521 includes any conductivematerial, for example, metals such as copper, nickel or silver. In someembodiments, the third circuit layer 521 has a line width and a linepitch of less than 8 micrometers, such as 7 micrometers, 6 micrometers,5 micrometers, 4 micrometers, 3 micrometers, 2 micrometers, 1micrometers, or 0.5 micrometers. The second insulating layer 522 coversthe third circuit layer 521, and the second insulating layer 522 has anopening 522 a. In some embodiments, the second insulating layer 522includes a photoimageable dielectric. Specifically, the opening 522 aexposes a portion of the third circuit layer 521.

The chip 530 is disposed over the second redistribution layer 520, andthe chip 530 is electrically connected with the third circuit layer 521through the opening 522 a. Specifically, a plurality of metal bumps (eg,chip pins) are disposed on a lower surface of the chip 530, and themetal bumps are bonded to the exposed portion of the third circuit layer521 through a solder material, so that the chip 530 is electricallyconnected with the third circuit layer 521. It should be understood thatalthough the light emitting device package structure 10 illustrated inFIG. 1 includes two chips 530, in other embodiments, the number of chips530 may be more than two or less than two.

The conductive connector 400 connects the first circuit layer 210 andthe second circuit layer 511. It should be noted that in the case wherethe light emitting device 300 includes a polysilicon (for example, thelight emitting device 300 is an organic light emitting diode device),the process temperature of forming the conductive connector 400 shouldbe in the range from a room temperature to 600° C. When the processtemperature exceeds 600° C., the crystal structure of thepolycrystalline silicon may be damaged. When the process temperature islower than room temperature, the connection of the conductive connector400 to the first circuit layer 210 is unstable, so that peeling mayoccur. Therefore, the conductive connector 400 can be a solder ballincluding a solder material that has a melting point below 600° C., suchas tin-bismuth. As discussed above, a certain technical effect can beachieved when the width of the recess 210 a is gradually narrowed fromthe top toward the bottom. Specifically, the bottom of the conductiveconnector 400 is embedded in the recess 210 a, so that the conductiveconnector 400 can be stably fixed on the first circuit layer 210 and isnot easily peeled off. In some embodiments, the conductive connector 400can be a metal pillar, such as a copper pillar. In the embodiments wherethe conductive connector 400 is a metal pillar, the operations offorming the metal pillar include: (a) forming a metal bump that connectsthe second circuit layer 511, wherein the bottom width of the metal bumpis greater than the width of the bottom surface of the recess 210 a, (b)aligning the metal bump with the recess 210 a, and (c) thermalcompressing the metal bump to the first circuit layer 210 to form themetal pillar connected to the first circuit layer 210. Since the widthof the recess 210 a is gradually narrowed from the top toward thebottom, and the bottom width of the metal bump is greater than the widthof the bottom surface of the recess 210 a, the bottom of the metal bumpcontacts and is subjected to pressure from the sidewall portion 212 ofthe first circuit layer 210 when the thermal compression is performed.The pressure that the bottom of the metal bump is subjected to canreduce the melting point of the pressed portion of the metal bump.Therefore, the bottom of the metal bump can be melted at a temperature,that does not affect the light emitting device 300, to form a metalpillar that connects the first circuit layer 210 and the second circuitlayer 511.

In some embodiments, the light emitting device package structure 10further includes a protective layer 540. The protective layer 540 coversthe chip 530 and the second insulating layer 522 and is filled in thegap between the chip 530 and the second insulating layer 522. Therefore,the protective layer 540 can protect the bonding between the metal bumpsof the chip 530 and the third circuit layer 521, thereby preventing theoccurrence of peeling. On the other hand, the protective layer 540 canalso block moisture permeation and avoid oxidation of the metal bumps,the solder material, and the third circuit layer 521. In someembodiments, the protective layer 540 includes a resin.

FIG. 2 is a cross-sectional view illustrating a light emitting devicepackage structure 10 according to the second embodiment of the presentinvention. The light emitting device package structure 10 of FIG. 2 issimilar to that of FIG. 1, except that the light emitting device 300 ofFIG. 2 is disposed between the protective substrate 100 and the circuitlayer structure 200. In addition, the light emitting device packagestructure 10 further includes a transparent adhesive layer 600. Thetransparent adhesive layer 600 covers the sidewall of the light emittingdevice 300 and is disposed between the protective substrate 100 and thecircuit layer structure 200. In some embodiments, the transparentadhesive layer 600 includes an optically clear adhesive (OCA). It shouldbe noted that in FIG. 2, the same or similar elements as those in FIG. 1are given the same reference numerals, and the description thereof isomitted. In the light emitting device package structure 10 of FIG. 2,the dielectric layer 220 may be transparent or non-transparent. In someembodiments, dielectric layer 220 includes a transparent photoimageabledielectric or a non-transparent photoimageable dielectric.

FIG. 3 is a cross-sectional view illustrating a light emitting devicepackage structure 10 according to the third embodiment of the presentinvention. As shown in FIG. 3, the light emitting device packagestructure 10 includes a protective substrate 100, a light emittingdevice 300, a transparent adhesive layer 600, and a circuitredistribution structure 500. The light emitting device 300 is disposedover the protective substrate 100. The transparent adhesive layer 600covers the sidewall of the light emitting device 300 and is disposedover the protective substrate 100. The circuit redistribution structure500 is disposed over the light emitting device 300 and the transparentadhesive layer 600, and the circuit redistribution structure 500includes a first redistribution layer 510, a second redistribution layer520, and a chip 530. It should be noted that the materials of theprotective substrate 100, the light emitting device 300, and thetransparent adhesive layer 600 are the same as these described above,and the description thereof is omitted.

The first redistribution layer 510 is disposed over the light emittingdevice 300 and the transparent adhesive layer 600. The firstredistribution layer 510 includes a first circuit layer 511. The firstcircuit layer 511 is electrically connected with the light emittingdevice 300. In some embodiments, the first circuit layer 511 includesany conductive material, for example, metals such as copper, nickel orsilver. In some embodiments, the first circuit layer 511 has a linewidth and a line pitch of less than 8 micrometers, such as 7micrometers, 6 micrometers, 5 micrometers, 4 micrometers, 3 micrometers,2 micrometers, 1 micrometers, or 0.5 micrometers. Although in FIG. 3shows that the light emitting device 300 is not in contact with thefirst circuit layer 511, it should be understood that the light emittingdevice 300 can be electrically connected with the first circuit layer511 in any manner when viewed in a different angle.

The second redistribution layer 520 is disposed over the firstredistribution layer 510. Specifically, the second redistribution layer520 includes a second circuit layer 521, an insulating layer 522, and aconductive contact 523. In some embodiments, the second circuit layer521 includes any conductive material, for example, metals such ascopper, nickel or silver. In some embodiments, the second circuit layer521 has a line width and a line pitch of less than 8 micrometers, suchas 7 micrometers, 6 micrometers, 5 micrometers, 4 micrometers, 3micrometers, 2 micrometers, 1 micrometers, or 0.5 micrometers. Theinsulating layer 522 covers the first circuit layer 511, and theinsulating layer 522 has a through-hole 522 b. In some embodiments,insulating layer 522 includes a photoimageable dielectric. Thethrough-hole 522 b exposes a portion of the first circuit layer 511, andthe conductive contact 523 is filled in the through-hole 522 b, so thatthe conductive contact 523 contacts the first circuit layer 511 and thesecond circuit layer 521. The conductive contact 523 may be a metalpillar, and includes, for example, a conductive metal such as copper,nickel or silver. As shown in FIG. 3, the width of the conductivecontact 523 is gradually widened from the top toward the bottom, so thatthe conductive contact 523 presents a trapezoidal shape, but the shapeis not limited thereto.

The chip 530 is disposed over the second redistribution layer 520 andelectrically connected with the second circuit layer 521. Specifically,a plurality of metal bumps (eg, chip pins) are disposed on a lowersurface of the chip 530, and the metal bumps are bonded to the secondcircuit layer 521 through a solder material.

In some embodiments, the light emitting device package structure 10further includes a protective layer 540. The protective layer 540 coversthe chip 530, the second circuit layer 521, and the insulating layer522, and the protective layer 540 is filled in the gap between the chip530 and the insulating layer 522. Therefore, the protective layer 540can protect the bonding between the metal bumps of the chip 530 and thesecond circuit layer 521, thereby preventing the occurrence of peeling.On the other hand, the protective layer 540 can also block moisturepermeation and avoid oxidation of the metal bumps, the solder material,and the second circuit layer 521.

A manufacturing method of the light emitting device package structure 10is also provided herein. FIGS. 4-7 are cross-sectional viewsillustrating various stages of a method for forming a circuitredistribution structure 500 according to an embodiment of the presentinvention.

As shown in FIG. 4, a first circuit layer 511 is formed over a firstsubstrate 710. For example, a conductive material is formed over thefirst substrate 710, and then the conductive material is patterned toform the first circuit layer 511. In some embodiments, the method offorming the conductive material includes, but is not limited to,electroplating, chemical vapor deposition, physical vapor deposition,and the like. Next, a first insulating layer 512 is formed to cover thefirst circuit layer 511, and the first insulating layer 512 includes athrough-hole 512 a exposing a portion of the first circuit layer 511.For example, a dielectric material is formed over the first circuitlayer 511, and then the dielectric material is patterned to form thethrough-hole 512 a. In some embodiments, the method of forming thedielectric material includes, but is not limited to, chemical vapordeposition, physical vapor deposition, and the like. In someembodiments, the manner of patterning the conductive material and thedielectric material includes depositing a photoresist on the layer to bepatterned, and then exposing and developing the photoresist to form apatterned photoresist layer. Next, the patterned photoresist layer isused as an etch mask to etch the layer to be patterned. The patternedphotoresist layer is then removed. Alternatively, in the embodimentswhere the dielectric material is a photoimageable dielectric, a portionof the photoimageable dielectric can be removed directly by exposure anddevelopment to complete the patterning.

Next, as shown in FIG. 5, a second circuit layer 521 is formed over thefirst insulating layer 512, and a conductive contact 513 is formed inthe through-hole 512 a. For example, a conductive material is formedover the first insulating layer 512 and filled in the through-hole 512a. The conductive material is then patterned to form the second circuitlayer 521 and the conductive contact 513. It should be noted that themethod of forming and patterning the conductive material may be the sameas these described above, and the description thereof is omitted.

Next, as shown in FIG. 6, a second insulating layer 522 is formed tocover both the second circuit layer 521 and the first insulating layer512, and the second insulating layer 522 includes an opening 522 aexposing a portion of the second circuit layer 521. For example, adielectric material is formed over the second circuit layer 521 and thefirst insulating layer 512, and then the dielectric material ispatterned to form the opening 522 a. It should be noted that the methodof forming and patterning the dielectric material are the same as thesedescribed above, and the description thereof is omitted. Next, a chip530 is placed over the second circuit layer 521 and the secondinsulating layer 522. Specifically, the chip 530 is placed in theopening 522A and electrically connected with the exposed portion of thesecond circuit layer 521. For example, a solder material is used to bondthe metal bumps (eg, chip pins) on the lower surface of the chip 530with the second circuit layer 521.

Next, as shown in FIG. 7, a protective layer 540 is formed to cover thechip 530 and the second insulating layer 522, and the protective layer540 is filled in the gap between the chip 530 and the second insulatinglayer 522. The first substrate 710 is then peeled off to expose thefirst circuit layer 511, thereby forming the circuit redistributionstructure 500.

FIG. 8 is a cross-sectional view illustrating a stage of a manufacturingmethod of a light emitting device package structure 10 according to thefirst embodiment of the present invention. As shown in FIG. 8, adielectric layer 220 is formed over a second substrate 100, and thedielectric layer 220 includes an opening 220 a. For example, adielectric material is formed over the second substrate 100 and then thedielectric material is patterned to form the opening 220 a. It should benoted that the method of forming and patterning the dielectric materialare the same as these described above, and the description thereof isomitted. Subsequently, a third circuit layer 210 is formed on thedielectric layer 220 and the bottom surface and sidewalls of the opening220 a. For example, a conductive material is conformally formed on thedielectric layer 220 and the bottom surface and sidewalls of the opening220 a. Next, the conductive material is patterned to form the thirdcircuit layer 210 that includes a bottom portion 211 and a sidewallportion 212. The bottom portion 211 and the sidewall portion 212 definea recess 210 a. It should be noted that the method of forming andpatterning the conductive material are the same as these describedabove, and the description thereof is omitted. A light emitting device300 is then placed over the dielectric layer 220, and the light emittingdevice 300 is electrically connected with the third circuit layer 210.

Next, the circuit redistribution structure 500 of FIG. 7 is placed overthe light emitting device 300 of FIG. 8, wherein the third circuit layer210 is electrically connected with the first circuit layer 511 through aconductive connector 400, thereby forming the light emitting devicepackage structure 10 as shown in FIG. 1. For example, first, a metalbump or solder material connected to the first circuit layer 511 in thecircuit redistribution structure 500 of FIG. 7 is formed. Next, themetal bump or solder material is aligned with the recess 210 a. Themetal bump or solder material is then thermal compressed with the thirdcircuit layer 210 to form a metal pillar or solder ball that connectsthe first circuit layer 511 and the third circuit layer 210.

FIGS. 9-11 are cross-sectional views illustrating various stages of amanufacturing method of a light emitting device package structure 10according to the second embodiment of the present invention. As shown inFIG. 9, a dielectric layer 220′ is formed over a first substrate 720.Next, a light emitting device 300 is placed over the dielectric layer220′.

Next, as shown in FIG. 10, a second substrate 100 is adhered on thelight emitting device 300 and the dielectric layer 220′. For example, anoptically clear adhesive is used to adhere the second substrate 100 tothe light emitting device 300 and the dielectric layer 220′, thusforming a transparent adhesive layer 600.

Next, as shown in FIG. 11, the structure of FIG. 10 is flipped upsidedown, and then the first substrate 720 is peeled off to expose thedielectric layer 220′. Subsequently, the dielectric layer 220′ ispatterned to form a dielectric layer 220 having an opening 220 a. Next,a third circuit layer 210 is formed on the dielectric layer 220 and thebottom surface and sidewalls of the opening 220 a, wherein the lightemitting device 300 is electrically connected with the third circuitlayer 210. In examples, a conductive material is conformally formed onthe dielectric layer 220 and the bottom surface and sidewalls of theopening 220 a. Next, the conductive material is patterned to form thethird circuit layer 210 that includes a bottom portion 211 and asidewall portion 212. The bottom portion 211 and the sidewall portion212 define a recess 210 a.

Next, the circuit redistribution structure 500 of FIG. 7 is placed overthe third circuit layer 210 and the dielectric layer 220 of FIG. 11,such that the third circuit layer 210 is electrically connected with thefirst circuit layer 511 through a conductive connector 400, therebyforming the light emitting device package structure 10 as shown in FIG.2. In examples, a metal bump or solder material is first formed toconnect with the first circuit layer 511 of the circuit redistributionstructure 500 of FIG. 7. Next, the metal bump or solder material isaligned with the recess 210 a. The metal bump or solder material is thenthermal compressed with the third circuit layer 210 to form a metalpillar or solder ball that connects the first circuit layer 511 and thethird circuit layer 210.

FIGS. 12-14 are cross-sectional views illustrating various stages of amanufacturing method of a light emitting device package structure 10according to the third embodiment of the present invention. As shown inFIG. 12, a first circuit layer 521 is formed over a first substrate 730.For example, a conductive material is formed over the first substrate730, and then the conductive material is patterned to form the firstcircuit layer 521. Next, an insulating layer 522 is formed to cover thefirst circuit layer 521, and the insulating layer 522 includes athrough-hole 522 b exposing a portion of the first circuit layer 521.For example, a dielectric material is formed over the first circuitlayer 521, and then the dielectric material is patterned to form thethrough-hole 522 b. Subsequently, a second circuit layer 511 is formedover the insulating layer 522, and a conductive contact 523 is formed inthe through-hole 522 b. For example, a conductive material is formedover the insulating layer 522 and filled in a through-hole 522 b. Next,the conductive material is patterned to form the second circuit layer511 and the conductive contact 523. It should be noted that the methodof forming and patterning the conductive material and the dielectricmaterial are the same as these described above, and the descriptionthereof is omitted.

Next, as shown in FIG. 13, a light emitting device 300 is placed overthe insulating layer 522, and the light emitting device 300 iselectrically connected with the second circuit layer 511. Next, a secondsubstrate 100 is adhered on the light emitting device 300. In examples,an optically clear adhesive is used to adhere the second substrate 100to the light emitting device 300, the insulating layer 522, and thesecond circuit layer 511, thus forming a transparent adhesive layer 600.

Next, the structure of FIG. 13 is flipped upside down, and then thefirst substrate 730 is peeled off to expose the first circuit layer 521and the insulating layer 522 as shown in FIG. 14.

Next, one or more chips 530 and a protective layer 540 are formed overthe first circuit layer 521 and the insulating layer 522, therebyforming the light emitting device package structure 10 as shown in FIG.3. Specifically, the chips 530 are placed over the first circuit layer521 and the insulating layer 522, and the chips 530 are electricallyconnected with the first circuit layer 521. For example, a soldermaterial is used to bond the metal bumps (e.g., chip pins) of the lowersurface of the chip 530 with the first circuit layer 521. It should benoted that, as described above, in the case where the light emittingdevice 300 includes a polysilicon, when the process temperature forbonding the chip 530 with the first circuit layer 521 is too high, thecrystal structure of the polycrystalline silicon may be damaged.Therefore, the melting point of the solder material used should be below600° C., such as tin-bismuth. Next, the protective layer 540 is formedto cover the chip 530, the first circuit layer 521, and the insulatinglayer 522, and the protective layer 540 is filled in the gap between thechip 530 and the insulating layer 522.

FIGS. 15-18 are cross-sectional views illustrating various stages ofanother manufacturing method of the light emitting device packagestructure 10 of FIG. 3. As shown in FIG. 15, which continues from FIG.12, a second substrate 740 is adhered on the second circuit layer 511and the insulating layer 522. For example, an adhesive is used to adherethe second substrate 740 to the second circuit layer 511 and theinsulating layer 522, thus forming an adhesive layer 610.

Next, the structure of FIG. 15 is flipped upside down, and then thefirst substrate 730 is peeled off to expose the first circuit layer 521and the insulating layer 522 as shown in FIG. 16.

Next, as shown in FIG. 17, one or more chips 530 are placed over thefirst circuit layer 521 and the insulating layer 522, such that thechips 530 are electrically connected with the first circuit layer 521.Next, a protective layer 540 is formed to cover the chip 530, the firstcircuit layer 521, and the insulating layer 522, and the protectivelayer 540 is filled in the gap between the chip 530 and the insulatinglayer 522.

Next, as shown in FIG. 18, the structure of FIG. 17 is flipped upsidedown, and then the second substrate 740 and the adhesive layer 610 areremoved to expose the second circuit layer 511 and the insulating layer522. Next, a light emitting device 300 is placed over the insulatinglayer 522, and the light emitting device 300 is electrically connectedwith the second circuit layer 511. Next, a third substrate 100 isadhered on the light emitting device 300, the insulating layer 522, andthe second circuit layer 511, thereby forming the light emitting devicepackage structure 10 as shown in FIG. 3.

From the embodiments described above of the present invention, thecircuit redistribution structure, which replaces the traditionalchip-on-film (COF) technology, is used to electrically connect the lightemitting device to the chip. Therefore, the problems that the portion ofthe flexible circuit board that contacts the substrate is easily peeledoff or broken and the wiring on the flexible circuit board is easilybroken are avoided. In addition, it is not necessary to reserve a spaceof the substrate for connecting with the flexible circuit board, so thatthe peripheral area of the display device can be effectively narrowed.

Although the present invention has been described in considerable detailwith reference to certain embodiments thereof, other embodiments arepossible. Therefore, the spirit and scope of the appended claims shouldnot be limited to the description of the embodiments contained herein.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims.

What is claimed is:
 1. A light emitting device package structure,comprising: a protective substrate; a circuit layer structure disposedover the protective substrate, wherein the circuit layer structureincludes a first circuit layer; a light emitting device disposed overthe circuit layer structure or between the protective substrate and thecircuit layer structure, wherein the light emitting device iselectrically connected with the first circuit layer; a firstredistribution layer disposed over the light emitting device, whereinthe first redistribution layer includes a second circuit layer and aconductive contact that contacts the second circuit layer; a conductiveconnector connecting the first circuit layer and the second circuitlayer; a second redistribution layer disposed over the firstredistribution layer, wherein the second redistribution layer includes athird circuit layer that contacts the conductive contact; and a chipdisposed over the second redistribution layer and electrically connectedwith the third circuit layer.
 2. The light emitting device packagestructure of claim 1, wherein the first redistribution layer furtherincludes a first insulating layer covering the second circuit layer,wherein the first insulating layer has a through-hole exposing a portionof the second circuit layer, wherein the conductive contact fills thethrough-hole and contacts the second circuit layer.
 3. The lightemitting device package structure of claim 1, wherein the secondredistribution layer further includes a second insulating layer coveringthe third circuit layer, wherein the second insulating layer has anopening exposing a portion of the third circuit layer, wherein the chipis electrically connected with the third circuit layer through theopening.
 4. The light emitting device package structure of claim 1,wherein a line width and a line pitch of the second circuit layer areless than 8 micrometers, and a line width and a line pitch of the thirdcircuit layer are less than 8 micrometers.
 5. A light emitting devicepackage structure, comprising: a protective substrate; a light emittingdevice disposed over the protective substrate; a first redistributionlayer disposed over the light emitting device, wherein the firstredistribution layer includes a first circuit layer that is electricallyconnected with the light emitting device; a second redistribution layerdisposed over the first redistribution layer, wherein the secondredistribution layer includes a second circuit layer and a conductivecontact that contacts the first circuit layer and the second circuitlayer; and a chip disposed over the second redistribution layer andelectrically connected with the second circuit layer.
 6. The lightemitting device package structure of claim 5, wherein the secondredistribution layer further includes an insulating layer covering thefirst circuit layer, and the insulating layer has a through-holeexposing a portion of the first circuit layer, wherein the conductivecontact fills the through-hole and contacts the first circuit layer andthe second circuit layer.
 7. The light emitting device package structureof claim 5, wherein a line width and a line pitch of the first circuitlayer are less than 8 micrometers, and a line width and a line pitch ofthe second circuit layer are less than 8 micrometers.
 8. A manufacturingmethod of a light emitting device package structure, comprisingfollowing operations: (i) providing a circuit redistribution structure;(ii) providing a first substrate; (iii) forming a circuit layerstructure over the first substrate, wherein the circuit layer structureincludes a first circuit layer; (iv) before or after operation (iii),placing a light emitting device between the first substrate and thecircuit layer structure or over the circuit layer structure, wherein thelight emitting device is electrically connected with the first circuitlayer; and (v) placing the circuit redistribution structure over thelight emitting device, wherein the circuit redistribution structureincludes a first redistribution layer, a second redistribution layer,and a chip, and the first redistribution layer includes a second circuitlayer and a conductive contact that contacts the second circuit layer,wherein the second circuit layer is electrically connected with thefirst circuit layer through a conductive connector, and the secondredistribution layer includes a third circuit layer that contacts theconductive contact, and the third circuit layer is electricallyconnected with the chip.
 9. The manufacturing method of claim 8, whereinoperation (i) includes the following sub-operations: (a) forming thefirst redistribution layer over a second substrate; (b) forming thesecond redistribution layer over the first redistribution layer; (c)placing the chip over the second redistribution layer; and (d) peelingoff the second substrate to expose the second circuit layer to form thecircuit redistribution structure.
 10. A manufacturing method of a lightemitting device package structure, comprising following operations: (i)providing a circuit redistribution structure having a substrate, a firstredistribution layer, and a second redistribution layer, wherein thefirst redistribution layer is disposed over the substrate, and the firstredistribution layer includes a first circuit layer and a conductivecontact that contacts the first circuit layer; wherein the secondredistribution layer is disposed over the first redistribution layer,and the second redistribution layer includes a second circuit layer thatcontacts the conductive contact; (ii) placing a light emitting deviceover the second redistribution layer, wherein the light emitting deviceis electrically connected with the second circuit layer; (iii) peelingoff the substrate to expose the first circuit layer before or afteroperation (ii); and (iv) placing a chip below the first redistributionlayer, wherein the chip is electrically connected with the first circuitlayer.